Pdf chlorinebased reactive ion etching process to pattern. Reactive ion etch rie of silicon dioxide sio2 with tetrafluoromethane cf4 summarydescription this report discusses the cf4 etch process of sio2 using the oxford 80 plus rie. The importance of ion bombardment for the etching rate is evident from the experimental results. Dry etch processes dryetching semiconductor technology. Due to the mostly vertical delivery of reactive ions, reactive ion etching can produce very anisotropic etch profiles, which contrast with the typically isotropic profiles of wet chemical etching. Reactive ion etching rie etching basics byu cleanroom. Singlecrystal sic has been etched to a depth of 80 m. While a standard rie process can be used, they are often inadequate so a couple of variations have been developed for specific applications. The ic industry has long since adopted dry etching to achieve small features, but in many cases feature size is not as critical in mems. During rie etching processes, volatile compounds are formed in interaction of sample surfaces and highenergy ionsradicals generated by lowpressure plasma. The plasma is generated under low pressure by an electromagnetic field.
With the combination of wet and dry processing, rie is. Reactive ion etching is an anisotropic processreactive ion etching is an anisotropic process. Rack university of tennessee plasma etching outline plasma vs. The comparison of reactive ion etching and plasma etching in. While a standard rie process can be used, they are often inadequate so a couple of. Reactive ion etching rie is a plasma process where radiofrequency rf dischargeexcited species radicals, ions etch substrate or thin films in a lowpressure chamber. New deep reactive ion etching process developed for the. Mechanisms for plasma and reactive ion etchfront roughening. The critical etch process time is discussed which minimizes both front surface reflectanc e and etching damage, considering the challenges of required system throughput in industry. Surfaces of sige alloy films after 5 min of reactive ion etching, i. This document is limited to the process of etching into silicon and an evaluation of the etch rate and the resist ablation.
Etch conditions in an rie system depend strongly on the many process parameters, such as pressure, gas flows, and rf power. Reactive ion etching tool and wafer etching cleanroom. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals. Deep reactiveion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates, typically with high aspect ratios. Reactiveion etching rie of epitaxial, strained sil x gex alloys, x and nanostructures that have applications in microfluidics and. A new concept for spatially divided deep reactive ion etching with. Silicon carbide sic is a promising material for harsh environment sensors and. A method for tapered deep reactive ion etching using a. Polymerization of fluorocarbons in reactive ion etching plasmas. Here, we systematically studied the effects of different processing parameters of inductively coupled plasma reactive ion etching icp rie on.
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. We compared the process of using conventional ar gas. The cryogenic drie process relies on inductively coupled sf 6 o 2. Pdf the reactive gases cbrf 3 and cf 4 have both been found to be effective in the reactive ion etching of niobium. Multilayers of magnetic materials were fabricated using this system. The wafer is held perpendicular or tilted into the ion beam, the etch progress is absolute anisotropic. Reactive ion etching systems rie etch process plasma etch. In the case of positive resists, the dark erosion grows faster with the developer concentration than the. Rie is a type of dry etching which has different characteristics than wet etching. A survey on the reactive ion etching of silicon in.
Mechanisms for plasma and reactive ion etchfront roughening jason t. Pdf a three step deep reactive ion etch drie process is developed to etch trenches of 10. Icrp6spp23 2006applications in commercial tft lcd fabrication lg 15. Pdf insights into the reactive ion etching mechanism of. Therefore most emphasis has been put on understanding the ion and radical kinetics, while relatively little attention has been paid to plasma polymerization. Improving reactive ion etching selectivity of gaasalgaas with he plus. Rie is faster than either pure physical ion bombardment or spontaneous chemical etching. Thereby argon ions are radiated onto the surface as an ion beam with about 1 to 3 kev. Selectivity, etch profile, etch rate, homogeneity, reproducibility is precisely adjustable in reactive ion etching by the gases used and the process parameters.
Polymerization of fluorocarbons in reactive ion etching. It focuses on concepts and topics for etching materials of interest in micromechanics. Microchemicals gmbh dry etching with photoresist masks high developer selectivity steep sidewalls require a developer allowing a high development rate of the exposed resist, and a minimized dark erosion of the unexposed resist. Reactive ion etch rie of silicon dioxide sio2 with. Specially suitable for the failure analysis of integrated circuitic, the reactive ion etching rie technique is most importance for delayering. Reactive ion etching rie is a simple operation and an economical solution for general plasma etching. He showed that the etch rate was directly dependent on the density of the highly reactive ions in the rf diode reactor. Ee143 f2010 lecture 14 etching university of california. A disadvantage of wet etching is the undercutting caused by the isotropy of the etch. The rie tool is set up to etch either silicon using cf48% o2 or photo resist including ebeam resist using o2. Studies of the reactive ion etching of silicongermanium. Deep reactive ion etching as a tool for nanostructure fabrication.
Other articles where reactive ion etching is discussed. David henrya department of applied physics, california institute of technology, pasadena, california 91125 colin welchb oxford instruments plasma technology, yatton, bristol bs49 4ap, united kingdom axel scherer. Plasma etching techniques including rie, pe, icp, and drie. The major drawback of the sputtering process is its inefficiency for the surface modification of delicate materials. Conventional deep reactive ion etching drie is a plasma etch process with. An important feature of rie is its ability to achieve etch directionality. Introduction deep reactive ion etching drie is a means of etching deep, high aspect ratio 30. Reactive ion etching rie we are interested in understanding the plasma etching mechanism, which includes plasma phase chemistry, plasmasurface reactions, and surface reactions. The basis of plasmaassisted etching, the main dry etching technique, is explained and plasma system.
Deep reactive ion etch drie rogue valley microdevices. Little information exists on the reactive ion etching of multicomponent glass compositions. Reactive ion etching for fabrication of biofunctional titanium. The ion beam etching ibe is a physical dry etch process. The icp source generates a highdensity plasma due to inductive coupling between the rf antenna and plasma. Tungsten etching has been studied in audio frequent plasmas with nf 3o 2 and sf 6o 2 mixtures. The basis of plasmaassisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching rie. Studies of the reactive ion etching of silicongermanium alloys.
Reactive ion etching systems rie plasma etching samco inc. The mechanisms of reactive ion etching are discussed by flamm et al. Steinbruchel described the rie of pure silica in a fluorocarbon plasma to be a process of ion enhanced chemical reaction. Amongst topdown methods, deep reaction ion etching drie is regarded as a powerful method to fabricate vertical silicon structures or pillars. The influence of etch mode, gas flows, pressure and power has been investigated. The most common plasma etch configurations are reactive ion etch rie, planar etch pe, inductively coupled. Because of the energy of the ions, they strike out.
Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. An overview of ion beam generation is described, which will be followed by a discussion and presentation of some beneficial applications of ion beam technology. It is a highly controllable process that can process a wide variety of materials, including. Highenergy ions from the plasma attack the wafer surface and react with it. In this work, the synthetic diamond reactive ion etching rie process is. Rie is like sputtering in the argon chamber, but the polarity is reversed and different gas mixtures are used. Ee143 f2010 lecture 14 8 etching of steps with a slope v lateral etch rate v vertical etch rate let etching time t l v. Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors m. Plasmabased copper dry etching process the first world record of room temperature plasma etch process applications in commercial ic fabrication bicmos chips kuo, proc.
The critical etch process time is discussed which minimizes both front surface reflectanc e and etching damage, considering the challenges of required. Reactive ion etching and plasma etching of tungsten. With the addition of our spts 200mm pegasus ase drie, we now offer deep reactive ion etch drie, a technique used in advanced mems device fabrication. Apr 23, 2014 rie is a synergistic process between chemically active species and energetic ion bombardment. This paper aims to give a practical approach to tackle matters related to plasma etching of. The etching dynamics are governed mainly by the dynamics of the gas transport process as dem. Reactive ion etch equipment qualitative synergism of ion bombardment and chemical etching. The reactive ion etching rie is a dry etching process used in electronic. Plasma etching techniques are typically classed by the configuration of the electrodes. During rie etching processes, volatile compounds are formed in interaction of sample surfaces and high. The atoms on the surface of the wafer fly away, leaving it bare. One of the processes that is most frequently used to remove material in an anisotropie manner was pioneered by hosokawa et al 5 in 1974 and is commonly referred to as reactive ion etching rie.
Deep reactive ion etch, drie, bosch process, conditioning recipe, seasoning recipe 1. Nevertheless it is clear that the latter process can drastically alter the plasma chemistry. Rie uses chemically reactive plasma to remove material deposited on wafers. New deep reactive ion etching process developed for the microfabrication of silicon carbide sem image of a microscale tensile test specimen in the process of fabrication using sf6 and ar plasma. Monocrystalline silicon, passivation, reactive ion etching, reflectance, surface texture. It was developed for microelectromechanical systems mems, which require these features, but is also used to excavate trenches for highdensity capacitors for dram and more recently for creating through. Plasmabased copper dry etching process the first world record of room temperature plasma etch process rie of tiw cu barrier and selectivity to pecvd sin x g. The samco rie10nr, rie300nr and rie480nr are fully automated openload reactive ion etching systems that are sized for 8. Because of the energy of the ions, they strike out material of the surface. Deep reactive ion etching drie is a type of reactive ion etching aimed at creating very deep, high aspect ratio structures.
Reactiveion etching rie is an etching technology used in microfabrication. Reactive ion etching rie is a high resolution mechanism for etching materials using reactive gas discharges. This is accomplished in part by using a switched gas scheme that includes both a passivation and etch step, otherwise known as. Rack university of tennessee terminology etching the process by which material is removed from a surface.
Berkeley ee143 f2010 lecture 15 1 reactive ion etching r ie plasma wafers rf. Reactive ion etching rie gan dry etching plasma youtube. Rie is like sputtering in the argon chamber, but the polarity is reversed. Introduction deep reactive ion etching drie is a means of etching deep, high aspect ratio. Nanomasters ion beam milling and etching systems are field proven, fully automated systems that provide ease of use, high reproducibility, and reliable performance with. Optimization of reactiveion etching rie epj web of conferences. Dry etching with photoresist masks engineering research.
Plasma etch offers four different reactive plasma rie systems. This ion energy is often essential in activating an etching process which is then called ion driven etching. Because ion bombardment is directional, rie has anisotropic character, with reduced lateral etch rate and vertical or nearly vertical sidewalls. A new automatic rie etching system has been developed. This thesis focuses on cryogenic deep reactive ion etching drie and presents how it can be applied to the fabrication of silicon micro and nanostructures that have applications in microfluidics and micromechanics. This document describes an etching process using the rie reactive ion etch tool. A he plus reactive ion etching technology for selective etching gaasalgaas has been developed, for the first time. Introduction lasma etching1,2,3,4,5 is currently widely used in the fabrication of siliconbased.
Pdf inhomogeneous etching of nanocrystalline diamond ncd films, which produces nanopillars during reactive ion etching process. Here also, a discussion of nomenclature is in order. Oxford instruments provides rie systems for chemical, ion induced and physical etching for applications such as semiconductors and failure analysis. Reactive ion etching process integration on monocrystalline. It is shown that the rie process is dominated by chemical etching. In reactive ion etching rie, described above, the objective is to optimize the balance between physical and chemical etching such that physical bombardment etch rate is sufficient to remove the requisite material while appropriate chemical reactions occur to form either easily exhausted volatile byproducts or protective deposits on the. Pdf three step deep reactive ion etch for high density trench etching.
For many etch steps, part of the wafer is protected from the etchant by a masking material which resists etching. An anisotropic etch is critical for highfidelity pattern transfer. Studies of the reactive ion etching of silicongermanium alloys citation for published version apa. Therefore most emphasis has been put on understanding the ion and radical kinetics, while relatively little attention has been paid to. Deep reactive ion etching is enabled by equipment that can achieve high density of reactive species, and independent control of ion current and ion energy. Reactive ion etching systems rie etch process plasma. Reactive ion etching rie is a plasma etching technology to fabricate micro and nanostructures. Reactive ion etching rie is used to remove organic material and etch away treated surfaces. Reactive ion etch rie fraunhofer isit fraunhofergesellschaft. Diamond microstructuring by deep anisotropic reactive ion etching. Ion beam milling and etching systems nanomaster, inc.
Steinbruchel described the rie of pure silica in a fluorocarbon plasma to be a process of ion enhanced chemical. Etching different etching processes are selected depending upon the particular material to be removed. Drie provides anisotropic selective silicon etching and is the only way to provide fast, highaspect ratio silicon micromachining with precise feature definition and etch profile control. Ee143 f2010 lecture 14 1 etching etching terminology etching considerations for ics wet etching reactive ion etching plasma etching professor n cheung, u. Techniques of cryogenic reactive ion etching in silicon for. Deep reactive ion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates, typically with high aspect ratios. Ion shading effects during metal etch in plasma processing. The key applications and benefits of using ion beam technology for etching processes in comparison to technology such as plasma etching will be presented. A newly developed cleaning and activation process and system that both saves up front costs and provides longterm savings. Dry etching is an enabling technology, which comes at a sometimes high cost. Selective plasma etching of polymeric substrates for. The purpose of dry etching is to create an anisotropic etch meaning that the etch is unidirectional. The systems are designed to meet demanding process requirements for fluorine chemistries for both research, and production customers. We have developed platinum pt deposition and chlorinebased reactive ion etch rie processes that are needed to deposit, pattern and embed electrodes deep within a mems process flow.
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